Itır Köymen
TOBB ETÜ, Ankara
“Memristive dynamics: resistive switching, quantum conductance and parallels with weak inversion MOS transistor dynamics”
Abstract
Emerging devices have become the focus of considerable research activity as Complementary Metal-Oxide-Semiconductor (CMOS) scaling approaches its practical limits. To meet growing computational demands, beyond-CMOS devices and alternatives to conventional von Neumann architectures are being investigated. Memristive devices offer potential advantages in area, power efficiency and functionality as well as compatibility with CMOS technology. This talk will look at the overarching theme of memristive dynamics starting from the conventional investigation of resistive switching dynamics, leading to filamentary conduction and quantum conductance. The nonlinear characteristics of memristors have been recognised as reminiscent of biological systems and weak inversion MOS transistors. These connections provide new perspectives on the underlying physics of memristive devices and highlight opportunities for exploiting their rich nonlinear dynamics in emerging electronic systems.
Dr. Itır Köymen received the MEng degree (Hons.) in Electronics and Electrical Engineering from The University of Edinburgh, Edinburgh, UK and her PhD in Bioengineering from Imperial College London, London, UK. During her PhD she worked on analysing memristive dynamics and memristor applications in analogue circuits. She is currently a faculty member of Electrical and Electronics Engineering Department at TOBB University of Economics and Technology where she focuses on device fabrication, electrical and structural characterization, quantum conductance and circuit applications of memristive devices. Her broader research interests lie at the intersection of emerging electronic devices, nanoscale transport, and unconventional computing.
Date: 21 October 2026, Wednesday
Time: 15:30
Place: SA-240
All interested are cordially invited.